# electronic devices and circuits syllabus for ece

ECE 2300 - Electrical Circuits and Electronic Devices: standard syllabus | course page; ECE 2560 - Introduction to Microcontroller-Based Systems: standard syllabus | course page; ECE 2998.01 - Undergraduate Research: standard syllabus | course page; ECE 2998.02 - Undergraduate Research: standard syllabus | course page In the circuit shown below, the Zener diode is ideal and the Zener voltage is 6 V. The output voltage Vo (in volts) is _______. Related Items: ec notes, ece notes, Ktu s3 ECE 333: Electronics I Spring 2020 Catalog: Introduction to electronic devices and the basic circuits. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are, An increase in the base recombination of a BJT will increase, In CMOS technology, shallow P-well or N-well regions can be formed using. The relative permittivities of Si and SiO2, respectively, are 11.7 and 3.9, and ε0 = 8.9 × 10-12 F/m. Which of the following statements about estimates for $\style{font-family:'Times New Roman'}{g_m}$ and $\style{font-family:'Times New Roman'}{r_o}$ is correct? In a forward biased pn junction diode, the sequence of events that best describes the mechanism of current flow is, In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces, The return loss of a device is found to be 20 dB. This section of GATE Syllabus includes questions based on Verbal Ability and Numerical Ability. In order to generate electron hole pairs in GaAs, which one of the wavelength (λC) ranges of incident radiation, is most suitable? Main aim is to strengthen the skill and knowledge among students inorder to develop them as a good Electronic Engineer. Electronic Devices and Circuits detailed syllabus for Electronics & Communication Engineering (ECE), 2nd Year 1st Sem R18 regulation has been taken from the JNTUH official website and presented for the B.Tech students affiliated to JNTUH course structure. The recombination rate is directly proportional to, At T = 300 K, the hole mobility of a semiconductor μp=500 cm2/V-s and kTq=26mV The hole diffusion constant Dp in cm2/s is ________, The donor and accepter impurities in an abrupt junction silicon diode are 1 x 1016 cm-3 and 5 x 1018 cm-3, respectively. Numerical Methods: Solution of nonlinear equations, single and multi-step methods for differential equations, convergence criteria. In the steady state, the hole concentration in the sample is approximately 10x, where x is integer. ELECTRONIC DEVICES AND CIRCUITS K=12μCoxWL=0.1 mA/V2 The value of ID (in mA) is _______ . ECN-291 Electronic Network Theory DCC 4 20. For Course Code, Subject Names, Theory Lectures, Tutorial, Practical/Drawing, Credits, and other information do visit full semester … Anna University EC6202 Electronic Devices and Circuits Syllabus Notes 2 marks with answer is provided below. Assume VBE = 0.7 V, kT/q = 25 mV and reverse saturation IS=10-13 A. Assume donor and acceptor doping to be the same ($N_A$ and $N_D$, respectively) in the p and n sides of all the three diodes. Emphasis is on analog and digital integrated circuits, very large-scale integration (VLSI), analog and digital signal processing, and system algorithms and architectures. Contents Contact Hours 1. The doping concentrations on the p-side and n-side of a silicon diode are 1×1016CM-3 m and 1×1017CM-3 m , respectively. The magnitude of the current i2 (in mA) is equal to ________, A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if. For the NMOSFET in the circuit shown, the threshold voltage is Vth , where Vth > 0. Module 2. Dear Aspirants, We are providing Important Formula notes for the subject Electronic Devices and Circuits.These notes will assist the candidates to revise the important formulas from time to time and they can review them in last few hours before the examination. Electrostatics; Maxwell’s equations: differential and integral forms and their interpretation, boundary conditions, wave equation, Poynting vector; Plane waves and properties: reflection and refraction, polarization, phase and group velocity, propagation through various media, skin depth; Transmission lines: equations, characteristic impedance, impedance matching, impedance transformation, Sparameters, Smith chart. Group I lists four types of p-n junction diodes. Dear Aspirants, We are providing Important Formula notes for the subject Electronic Devices and Circuits.These notes will assist the candidates to revise the important formulas from time to time and they can review them in last few hours before the examination. Which one of the following relationships about the built-in voltages is TRUE? The transconductance of the BJT (in mA/V) is________. Dimitrijev- Semiconductor Devices- … Syllabus and Tut. MODULE 3. Assume electronic charge q = 1.6×10-19 C, kT/q = 25 mV and electron mobility μn = 1000 cm2/V-s. Read more details here. In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. Which of the following is correct? The expected value of mobility versus doping concentration for silicon assuming full dopant ionization is shown below. A solar cell of area 1.0 cm2 , operating at 1.0 sun intensity, has a short circuit current of 20 mA, and an open circuit voltage of 0.65 V. Assuming room temperature operation and thermal equivalent voltage of 26 mV, the open circuit voltage (in volts, correct to two decimal places) at 0.2 sun intensity is _______. Students will get experience with the fundamental nonlinear devices for circuit design: diodes and transistors. Have a look: Verbal Ability: English grammar, sentence completion, verbal analogies, word groups, instructions, critical reasoning and verbal deduction, Numerical Ability: Numerical computation, numerical estimation, numerical reasoning and data interpretation. for the students who were admitted in Academic Session 2010-2011) 6 2. If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor? Bell-Electronics Devices and Circuits-Oxford 3. JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY HYDERABAD II Year B.Tech. The value of the resistance of the voltage Controlle resistor (in Ω) is_____. Assume complete ionization of impurities. Biasing, small-signal and large signal analysis and the principles employed in the design of electronic circuits are included in the course. The energy band diagram and the electron density profile n(x) in a semiconductor are shown in figures. For forward bias, the RPS +ve is connected to the anode of the diode and RPS –ve is Along with GATE 2021 Electronics and Communication Engineering syllabus, candidates are also advised to check the GATE 2021 exam pattern for effective exam preparation. In a uniformly doped BJT, assume that NE, NB and NC are the emitter, base and collector dopings in atoms/cm3, respectively. Introduction to Electronics Engineering: Overview, scope and objective of studying Electronics … The gate-source overlap capacitance is approximately, The source-body junction capacitance is approximately, A silicon PN junction is forward biased with a constant current at room temperature. The study notes are the perfect approach to know about which types of questions can be asked and how to make a plan of study to solve the questions easily. The focus throughout the course lies on the applications of these technologies. ECE 333: Electronics I Spring 2020 Catalog: Introduction to electronic devices and the basic circuits. In MOSFET fabrication, the channel length is defined during the process of, A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The permittivities of the semiconductor and the oxide layer are εs and εos respectively. Match each device in Group I with one of the option in Group II to indicate the bias condition of that device in its normal mode of operation. Signal System Lab 2. These sections are broadly created that further include several topics under each one of them Section 1: Engineering Mathematics In a p-n junction diode at equilibrium, which one of the following statements is NOT TRUE? This is not the official website of GATE. ... ECE KTU S6 EC312 Object Oriented Programming Notes. If VD is adjusted to be 2 V by changing the values of R and VDD, the new value of ID (in mA) is, For the MOSFETs shown in the figure, the threshold voltage |Vt| = 2 V and. You can find GATE ECE subject wise and topic wise questions with answers Module 3. Anna University EC8252 ELECTRONIC DEVICES SYLLABUS 2017 Regulation has been revised for the Students who joined in the academic year 2017-2018. Sheet of Intelligent Instrumentation (compulsory) For 8th Sem BE(ECE) BIT Mesra This resource is about the syllabus of Intelligent Instrumentation a compulsory paper of 8th Semester BIT Mesra ,ECE Branch with a subject code of EC8101 along with the tutorial sheet.The whole syllabus has been broken down into 8 modules and questions are asked from each module most of … As per the syllabus guidelines available on the official website, Electronics and Communication Engineering Syllabus has eight sections: Engineering Mathematics, Networks Signals and Systems,  Electronic Devices, Analog Circuits, Digital Circuits, Control Systems, Communications and Electromagnetics. The measured transconductance gm of an NMOS transistor operating in the linear region is plotted against the gate voltage VG at constant drain voltage VD. Embedded / Real-Time Systems by Dr. K.V.K.K. Dimitrijev- Semiconductor Devices- Oxford 4. Practicing the Electronic Devices and Circuits ECE Quiz Questions helps the intenders for your upcoming GATE exam and also core side interviews or any competitive exams. Module 5. CSN-221 Computer Architecture and Microprocessors : DCC 4 : 19. Module 1. CSE Assuming that the reverse bias voltage is » built-in potentials of the diodes, the ratio C 2/C1 of their reverse bias capacitances for the same applied reverse bias, is_________. EC8353 EDC Syllabus. HOME; ... ECE KTU S7 ECE Microwave Devices and Circuits Notes. If the minimum feature sizes that can be realized using System1 and System2 are $L_{min1}$ and $L_{min2}$ respectively, the ratio $L_{min1}/L_{min2}$ (correct to two decimal places) is__________. Continuous-time signals: Fourier series and Fourier transform representations, sampling theorem and applications; Discrete-time signals: discrete-time Fourier transform (DTFT), DFT, FFT, Z-transform, interpolation of discrete-time signals; LTI systems: definition and properties, causality, stability, impulse response, convolution, poles and zeros, parallel and cascade structure, frequency response, group delay, phase delay, digital filter design techniques. Linear Algebra: Vector space, basis, linear dependence and independence, matrix algebra, eigenvalues and Eigen vectors, rank, solution of linear equations – existence and uniqueness. The thermal voltage (VT) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. here EC6202 EDC Syllabus notes download link is provided and students can download the EC6202 Syllabus and Lecture Notes and can make use of it. The minority carrier lifetime in the sample is 1 μs. Match each device in Group I with its characteristic property in Group II. Given the intrinsic carrier concentration of silicon at T = 300 K is ni = 1.5 x 1010 cm-3. Assume that the intrinsic carrier concentration ni = 1.5×1010/cm3. The different topics included in the GATE syllabus for General Aptitude are same for all the exams. MODULE 5. An N-type semiconductor having uniform doping is biased as shown in the figure. Which of the following figures represents the electric field profile near the pn junction? EC6202 Notes Syllabus all 5 units notes are uploaded here. Given kTq=0.026 V, $D_n$ = 36cm2s–1 , and Dμ=kTq . Knowing GATE syllabus for ECE will help candidates in making a good preparation strategy which will help them achieve a desired goals. When the drain voltage VD=1.6 V, the drain current ID was found to be 0.5 mA. Biasing, small-signal and large signal analysis and the principles employed in the design of electronic circuits are included in the course. An abrupt pn junction (location at x = 0) is uniformly doped on both p and n sides.              S2: The channel potential increases from source to drain The details regarding GATE 2021 exam conducting body is not out yet. KTU S7 ECE Study Materials and Syllabus for EC401 Information Theory & … Copyright © 2020 Info edge India Ltd. All rights reserved. The course deals with the op-amp, the diode, the bipolar junction transistor, and the field-effect transistor. Revised & Proposed Syllabus of B.Tech in ECE (To be followed from the academic session, July 2011, i.e. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE? The depletion region width Xn on the N-side of the junction is 0.2 μm and the permittivity of silicon (εsi) is 1.044×10-12 F/cm. In the circuit shown below, the $\left(W/L\right)$ value for M2 is twice that for M1. In the three dimensional view of a silicon n-channel MOS transistor shown below, δ= 20 nm. A dc voltage of 10 V is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm as shown in figure. here EC8353 Electron Devices and Circuits notes download link is provided and students can download the EC8353 CE Lecture Notes and can make use of it. Number systems; Combinatorial circuits: Boolean algebra, minimization of functions using Boolean identities and Karnaugh map, logic gates and their static CMOS implementations, arithmetic circuits, code converters, multiplexers, decoders and PLAs; Sequential circuits: latches and flip‐flops, counters, shift‐registers and finite state machines; Data converters: sample and hold circuits, ADCs and DACs; Semiconductor memories: ROM, SRAM, DRAM; 8-bit microprocessor (8085): architecture, programming, memory and I/O interfacing. A small percentage of impurity is added to an intrinsic semiconductor at 300 K. Which one of the following statements is true for the energy band diagram shown in the following figure? Probability and Statistics: Mean, median, mode and standard deviation; combinatorial probability, probability distribution functions - binomial, Poisson, exponential and normal; Joint and conditional probability; Correlation and regression analysis. Thomas L.Floyd, “Electronic devices” Conventional current version, Pearson prentice hall, … You can find GATE ECE subject wise and topic wise questions with answers Assume kT/q = 25 mV. S2: For quantum tunneling to occur, a very narrow energy barrier is required The collector current IC for this mode of operation is, At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is. We have also provided number of questions asked since 2007 and average weightage for each subject. MODULE 4. Which one of the following statements is true? Check below links to download the ECE Books for Free. The charge of an electron is 1.6X10-19 C. The conductivity (in S cm-1) of the silicon sample at 300 K is ______. The magnitude of the transconductance gm is. Field Theory Contact Hours/Week Cr. When the optical power incident on a photodiode is 10µW and the responsivity is 0.8 A/W, the photocurrent generated (in µA) is ________. Consider two BJTs biased at the same collector current with area A1 = 0.2 μm × 0.2 μm and A2 = 300 μm × 300 μm. Singh & Singh- Electronics Devices and Integrated Circuits –PHI 5. ... EC 2251 ELECTRONIC CIRCUITS II. Module 4. 9 EC392 Solid State Devices 0 0 3 3 2 10 11 EC393 EC394 1. Given that the permittivity of silicon is 1.04 × 10–12 F/cm, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are. If Vi = 5sin(ωt )Volts, the minimum and maximum values of Vo (in Volts) are, respectively, For the n-channel MOS transistor shown in the figure, the threshold voltage VTh is 0.8 V. Neglect channel length modulation effects. The channel length modulation parameter λ (in V-1) is ______. September 13th, 2020 - Syllabus for B Tech ECE Second Year Revised amp Proposed Syllabus of B Tech in ECE To be followed from the academic session July 2011 i e for the students who were admitted in Academic Session 2010 2011 6 2 Bell Electronics Devices and Circuits Oxford 3 Dimitrijev Semiconductor Devices Oxford 4 Vbias and VD are so adjusted that both transistors are in saturation. Consider the following statements for a metal oxide semiconductor field effect transistor (, Consider a silicon p-n junction with a uniform acceptor doping concentration of 10, The magnitude of the electric field (in kV/cm) in the semiconductor due to non uniform doping is _________, A long-channel NMOS transistor is biased in the linear region with, Consider avalanche breakdown in a silicon, Consider a region of silicon devoid of electrons and holes, with an ionized donor density of, The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm, The injected excess electron concentration profile in the base region of an, 2020 © GATE-Exam.in | Complete Solution for GATE, Intrinsic semiconductor doped with pentavalent atoms to form, Electronics and Communication Engineering, Energy Bands in Intrinsic and Extrinsic Silicon, Carrier Transport: Diffusion Current, Drift Current, Mobility and Resistivity, Integrated Circuits Fabrication Process: Oxidation, Diffusion, Ion Implantation, Photolithography, Twin-Tub CMOS Process. Two identical nMOS transistors M1 and M2 are connected as shown below. 10. Share Notes with your friends. Let $\style{font-family:'Times New Roman'}{g_{m1},\;g_{m2}}$ be the transconductances and $\style{font-family:'Times New Roman'}{r_{o1},\;r_{o2}}$ be the output resistances of transistors M1 and M2, respectively. For Course Code, Subject Names, Theory Lectures, Tutorial, Practical/Drawing, Credits, and other information do visit full semester … Mar 1, 2013 By Vasu Leave a Comment. The value of the collector bias current (in mA) required to match the input impedance of the amplifier to the impedance of the antenna is________. The circuit is used as an amplifier with the input connected between G and S terminals and the output taken between D and S terminals. Embedded Systems Architecture, Programming and Design book by Rajkamal 2. A silicon sample is uniformly doped with donor type impurities with a concentration of 1016/cm3. ECE - I Sem L T/P/D C 4 -/-/- 4. Electronic Devices and Circuits detailed syllabus for Electronics & Communication Engineering (ECE), 2nd Year 1st Sem R18 regulation has been taken from the JNTUH official website and presented for the B.Tech students affiliated to JNTUH course structure. The average time (in μs) taken by the electrons to move from one end of the bar to other end is________. Basic control system components; Feedback principle; Transfer function; Block diagram representation; Signal flow graph; Transient and steady-state analysis of LTI systems; Frequency response; RouthHurwitz and Nyquist stability criteria; Bode and root-locus plots; Lag, lead and lag-lead compensation; State variable model and solution of state equation of LTI systems. The innovation-oriented Electronics and Communication Engineering (ECE) syllabus lays emphasis on the study of communication equipment and circuits and networks so that the students can learn about developing various technologies and building equipment that are used for transmission and reception of data. The GATE 2020 syllabus for ECE PDF will have a total of 8 sections covered in it and they are, Engineering Mathematics; Networks, Signals and Systems; Electronic Devices; Analog Circuits; Digital Circuits; Control Systems; Communications and Electromagnetics. Consider the following two statements about the internal conditions in an n-channel MOSFET operating in the active region